ION-IMPLANTATION INTO GAAS

被引：0
|
作者：
CROSET, M
ICOLE, J
PERROCHEAU, J
机构：
来源：
REVUE TECHNIQUE THOMSON-CSF | 1980年 / 12卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：827 / 852
页数：26
相关论文
共 50 条
  • [21] SE+ ION-IMPLANTATION INTO ENCAPSULATED GAAS
    SHAHID, MA
    GWILLIAM, R
    SEALY, BJ
    [J]. ELECTRONICS LETTERS, 1985, 21 (17) : 729 - 730
  • [22] ION-IMPLANTATION OF ZIRCONIUM AND HAFNIUM IN INP AND GAAS
    KNECHT, A
    KUTTLER, M
    SCHEFFLER, H
    WOLF, T
    BIMBERG, D
    KRAUTLE, H
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 683 - 686
  • [23] TRANSFERABILITY OF A SIMPLE ION-IMPLANTATION PROCESS IN GAAS
    ANDERSON, CL
    DUNLAP, HL
    MOLNAR, B
    COMAS, J
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C119 - C119
  • [24] ION-IMPLANTATION EFFECTS ON GAAS-MESFETS
    ANHOLT, R
    SIGMON, TW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) : 250 - 255
  • [25] EFFECTS OF ION-IMPLANTATION ON DEEP LEVELS IN GAAS
    JERVIS, TR
    WOODARD, DW
    EASTMAN, LF
    [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 619 - 621
  • [26] RECENT DEVELOPMENTS IN ION-IMPLANTATION DOPING OF GAAS
    EISEN, FH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 530 - 530
  • [27] PRECIPITATION OF IMPURITIES IN GAAS AMORPHIZED BY ION-IMPLANTATION
    OPYD, WG
    GIBBONS, JF
    MARDINLY, AJ
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1515 - 1517
  • [28] ION-IMPLANTATION INTO GAAS FOR MICROWAVE DEVICE APPLICATIONS
    PAULSON, WM
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1715 - 1717
  • [29] OPTICAL DETECTION OF BE ION-IMPLANTATION DAMAGE IN GAAS
    MOLNAR, B
    [J]. REPORT OF NRL PROGRESS, 1975, (MAR): : 21 - 24
  • [30] SI ION-IMPLANTATION FOR GAAS IC FABRICATION
    YAMAZAKI, H
    HONDA, T
    ISHII, Y
    [J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1985, 33 (01): : 130 - 135
12345