EFFECTS OF ION-IMPLANTATION ON DEEP LEVELS IN GAAS

被引：10
|
作者：
JERVIS, TR [1 ]
WOODARD, DW [1 ]
EASTMAN, LF [1 ]
机构：
[1] CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 20期
关键词：
D O I：
10.1049/el:19790442
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：619 / 621
页数：3
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