PRECIPITATION OF IMPURITIES IN GAAS AMORPHIZED BY ION-IMPLANTATION

被引：13
|
作者：
OPYD, WG
GIBBONS, JF
MARDINLY, AJ
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] LOCKHEED MISSILES & SPACE CO INC,SUNNYVALE,CA 94086
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 16期
关键词：
D O I：
10.1063/1.99942
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1515 / 1517
页数：3
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