ION-IMPLANTATION OF ZIRCONIUM AND HAFNIUM IN INP AND GAAS

The redistribution of Zr and Hf implanted into InP and GaAs and the lattice recrystallization after annealing are studied. Zr and Hf profiles are measured by secondary ion mass spectroscopy. The recrystallization is evaluated by Rutherford backscattering/channelling and X-ray double crystal diffractometry. After low dose implantation, both Zr and Hf show absolute thermal stability under standard heat treatments. Only after high dose implantation Zr is found to accumulate below the surface and to diffuse slowly into the bulk of InP and GaAs samples with a more pronounced redistribution in InP than in GaAs. Hafnium, in contrast, proves to be thermally stable even under extreme implantation and annealing conditions. A novel Zr-related level with an activation energy of (0.53 +/- 0.03) eV is identified in Zr doped n-InP: Si by deep level transient spectroscopy.