RECENT DEVELOPMENTS IN ION-IMPLANTATION DOPING OF GAAS

被引：0
|
作者：
EISEN, FH [1 ]
机构：
[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期
关键词：
D O I：
10.1116/1.569298
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：530 / 530
页数：1
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