ION-IMPLANTATION INTO GAAS

被引：0

|

作者：

CROSET, M

ICOLE, J

PERROCHEAU, J

机构：

来源：

REVUE TECHNIQUE THOMSON-CSF | 1980年 / 12卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：827 / 852

页数：26

相关论文

共 50 条

[31] ION-IMPLANTATION OF BORON IN GAAS-MESFETS
MCNALLY, PJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 126 - 128
[32] GAAS HALL ELEMENT FABRICATED BY ION-IMPLANTATION
TANOUE, H
TSURUSHIMA, T
KATAOKA, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1188 - 1192
[33] ION-IMPLANTATION INDUCED DISPLACEMENT OF GA AND AS IN GAAS
BHATTACHARYA, RS
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 195 - 197
[34] DEFECT DIFFUSION DURING ION-IMPLANTATION INTO GAAS
WILK, E
WESCH, W
HEHL, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : K197 - K201
[35] Ion-implantation technology for improved GaAs MESFETs performance
Liu, CH
Wu, LW
Chang, SJ
Chen, JF
Liaw, UH
Chen, SC
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (02) : 91 - 93
[36] FORMATION OF AS PRECIPITATES IN GAAS BY ION-IMPLANTATION AND THERMAL ANNEALING
CLAVERIE, A
NAMAVAR, F
LILIENTALWEBER, Z
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1271 - 1273
[37] DEEP LEVELS INDUCED BY FOCUSED ION-IMPLANTATION IN GAAS
YUBA, Y
YANO, T
ISHIDA, T
GAMO, K
NAMBA, S
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 151 - 154
[38] AMORPHOUS-LAYER FORMATION IN GAAS BY ION-IMPLANTATION
LIN, MS
[J]. ELECTRONICS LETTERS, 1978, 14 (21) : 695 - 696
[39] THE USE OF ION-IMPLANTATION FOR MICROMACHINING GAAS FOR SENSOR APPLICATIONS
MIAO, J
HARTNAGEL, HL
RUCK, D
FRICKE, K
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1995, 46 (1-3) : 30 - 34
[40] THE EFFECTS OF ION-IMPLANTATION ON THE THERMAL-OXIDATION OF GAAS
BUTCHER, DN
SEALY, BJ
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 203 - 206

← 1 2 3 4 5 →