ION-IMPLANTATION INDUCED DISPLACEMENT OF GA AND AS IN GAAS

被引：9
|
作者：
BHATTACHARYA, RS [1 ]
机构：
[1] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 02期
关键词：
D O I：
10.1063/1.94706
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：195 / 197
页数：3
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