ION-IMPLANTATION AND ANNEALING OF UNDOPED (AL,GA)AS/GAAS HETEROSTRUCTURES

被引：6
|
作者：
BARATTE, H
JACKSON, TN
SOLOMON, PM
LATULIPE, DC
FRANK, DJ
MOORE, JS
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 18期
关键词：
D O I：
10.1063/1.98657
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1459 / 1461
页数：3
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