SUBSTITUTIONAL SITE CONTROL OF SI IN GAAS BY STOICHIOMETRY CHANGE WITH GA ION-IMPLANTATION

被引：1
|
作者：
NAKAMURA, K
NOZAKI, T
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷
关键词：
D O I：
10.1016/0168-583X(89)90192-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：308 / 311
页数：4
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