ELLIPSOMETRIC PROFILING OF ION-IMPLANTATION INDUCED DAMAGE IN GAAS

被引：0
|
作者：
KIM, Q [1 ]
PARK, YS [1 ]
机构：
[1] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1979年 / 24卷 / 03期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：314 / 314
页数：1
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