DAMAGE PRODUCTION DURING MEV ION-IMPLANTATION IN GAAS AND INAS

被引：7

作者：

BACHMANN, T ^{[1
]}

WENDLER, E ^{[1
]}

WESCH, W ^{[1
]}

HERRE, O ^{[1
]}

WILSON, RJ ^{[1
]}

JEYNES, C ^{[1
]}

GWILLIAM, RM ^{[1
]}

SEALY, BJ ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)00565-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

[100]-GaAs and InAs were implanted with 2 or 3 MeV Se+ or As+ ions over a wide dose range at different target temperatures. The implanted layers were investigated with respect to the damage production by means of Rutherford backscattering spectrometry. Defect profiles were calculated using the discontinuous model of dechanneling. The defect production is described within a defect-interaction and amorphization model. Self-annealing effects during room temperature implantation indicate an influence of electronic energy deposition in the near surface region.

引用

页码：619 / 622

页数：4

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