DAMAGE ACCUMULATION AND AMORPHIZATION IN GAAS BY MEV SI+ ION-IMPLANTATION AT DIFFERENT TILT ANGLES

被引：3
|
作者：
ZHAO, QT
WANG, ZL
XU, TB
ZHU, PR
ZHOU, JS
机构：
[1] BEIJING UNIV,INST MICROELECTR,BEIJING 100871,PEOPLES R CHINA
[2] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 90卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/0168-583X(94)95584-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Damage accumulation and amorphization in GaAs(100) by MeV Si+ ion implantation at different tilt angles have been studied using the Rutherford backscattering and channeling technique. It was found that the total amount of damage increases linearly with the implant dose at doses less than the threshold dose for amorphization. Layer by layer amorphization was observed at doses higher than the, threshold dose. The damage distribution is strongly influenced by the target tilt angle. With an increase in the implant tilt angle, the damage level decreases. A model for the damage accumulation and amorphization is discussed.
引用
收藏
页码：415 / 418
页数：4
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