DEFECT DIFFUSION DURING ION-IMPLANTATION INTO GAAS

被引：16
|
作者：
WILK, E
WESCH, W
HEHL, K
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 76卷 / 02期
关键词：
D O I：
10.1002/pssa.2210760266
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K197 / K201
页数：5
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