BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS

被引：15

作者：

KRESSEL, H

BLICHER, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.1702778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2495 / &

共 50 条

[41] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS
TAUC, J
ABRAHAM, A
PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937
[42] FORMATION OF BREAKDOWN IN SILICON P-N JUNCTIONS
ISAEV, MR
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2442 - &
[43] TUNNEL BREAKDOWN IN SIC P-N JUNCTIONS
ALADINSKII, VK
KUZNETSO.EN
PAVLICHE.VI
RYZHIKOV, IV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (04): : 599 - +
[44] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS
LOGAN, RA
CHYNOWETH, AG
COHEN, BG
PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &
[45] Electric breakdown in GaN p-n junctions
Dmitriev, VA
Irvine, KG
Carter, CH
Kuznetsov, NI
Kalinina, EV
APPLIED PHYSICS LETTERS, 1996, 68 (02) : 229 - 231
[46] EDGE BREAKDOWN OF P-N JUNCTIONS IN GERMANIUM
VUL, BM
SHOTOV, AP
SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (10): : 2031 - 2036
[47] VOLT-AMPERE CHARACTERISTICS OF TUNNEL P-N JUNCTIONS IN GALLIUM ARSENIDE IRRADIATED BY FAST NEUTRONS
ALEKSEEV.ZM
BRUDNYI, VN
KRIVOV, MA
MALYANOV, SV
KHOMCHUK, ON
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1970, (03): : 146 - +
[48] EFFECT OF HYDROSTATIC PRESSURE ON SPECTRAL PHOTORESPONSE AND SPONTANEOUS EMISSION FROM GALLIUM ARSENIDE P-N JUNCTIONS
SIROTA, NN
SHIENOK, GG
PHYSICA STATUS SOLIDI, 1969, 36 (01): : K21 - &
[49] INVESTIGATION OF P-N JUNCTIONS IN GALLIUM ARSENIDE EMITTING LASER RADIATION WHEN EXCITED WITH AN ELECTRON BEAM
DEMIDOV, YP
GUROVA, RP
KUSHNIR, YM
FRIMER, AI
FETISOV, DV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1030 - &
[50] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS
ALFEROV, ZI
KOROLKOV, VI
TRUKAN, MK
SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2813 - +

← 1 2 3 4 5 →