THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS

被引：26

|

作者：

TAUC, J

ABRAHAM, A

机构：

来源：

PHYSICAL REVIEW | 1957年 / 108卷 / 04期

关键词：

D O I：

10.1103/PhysRev.108.936

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：936 / 937

页数：2

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