Breakdown electroluminescence spectra of silicon carbide p-n junctions

The breakdown electroluminescence spectra of p-n junctions with uniform and microplasma breakdown, which were prepared on SiC-3C crystals, have been investigated. A distinct periodic structure of an oscillatory nature with oscillation periods of 0.1–0.5 eV was observed in the room-temperature emission spectra of individual microplasmas. The amplitude of the bands increases with the period, and at maximum period it exceeds the amplitude of the background radiation. A similar structure was also observed in the spectra of individual microplasmas on SiC-6H. It is assumed that the structure is due to the action of a strong electric field in the region of radiation formation.