Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures

被引：2
|
作者：
Belous, MV [1 ]
Genkin, AM [1 ]
Genkina, VK [1 ]
机构：
[1] Natl Tech Univ Ukraine, UA-252056 Kiev, Ukraine
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 06期
关键词：
Silicon; Carbide; Characteristic Feature; Magnetic Material; Silicon Carbide;
D O I：
10.1134/1.1187754
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The spectral dependence of the temperature coefficient of the quantum efficiency of breakdown electroluminescence of alloyed p-n structures based on silicon carbide is investigated. A similarity is observed between the profiles of the spectral distributions of the temperature coefficient and the relative slope of the spectrum. These curves were found to have characteristic features that depend on the crystal modification of the as-grown material and the working voltage of the structure. (C) 1999 American Institute of Physics. [S1063-7826(99)02206-1].
引用
收藏
页码：672 / 676
页数：5
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