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THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS

被引：26
|
作者：
TAUC, J
ABRAHAM, A
机构：
来源：
PHYSICAL REVIEW | 1957年 / 108卷 / 04期
关键词：
D O I：
10.1103/PhysRev.108.936
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：936 / 937
页数：2
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