EDGE BREAKDOWN OF P-N JUNCTIONS IN GERMANIUM

被引：0

作者：

VUL, BM

SHOTOV, AP

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SOVIET PHYSICS-TECHNICAL PHYSICS | 1957年 / 2卷 / 10期

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O59 [应用物理学];

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引用

页码：2031 / 2036

页数：6

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[1] BREAKDOWN EFFECT IN P-N ALLOY GERMANIUM JUNCTIONS
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[2] MICROPLASMA-BREAKDOWN OF GERMANIUM P-N JUNCTIONS
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[3] REACTIVE CHARACTERISTICS OF NARROW GERMANIUM P-N JUNCTIONS IN BREAKDOWN REGION
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[J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 119 - +
[4] THICK P-N JUNCTIONS IN GERMANIUM
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[5] EXPERIMENTAL INVESTIGATION OF BREAKDOWN IN GERMANIUM P-N JUNCTIONS IN A MICROWAVE ELECTRIC FIELD
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[6] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
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[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
[7] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
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[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[8] TUNNELING PROBABILITY IN GERMANIUM P-N JUNCTIONS
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[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (04) : 730 - 730
[9] COLLISION IONIZATION IN GERMANIUM P-N JUNCTIONS
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[J]. SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (03): : 413 - 421
[10] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS
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