ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS

被引：0
|
作者：
ALFEROV, ZI
KOROLKOV, VI
TRUKAN, MK
机构：
来源：
SOVIET PHYSICS SOLID STATE,USSR | 1967年 / 8卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：2813 / +
页数：1
相关论文
共 50 条
  • [1] SOME PHOTOELECTRIC PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS
    ALFEROV, ZI
    ZIMOGORO.NS
    TRUKAN, MK
    TUCHKEVI.VM
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 990 - +
  • [2] RECOMBINATION RADIATION SPECTRUM OF GALLIUM ARSENIDE WITH CURRENT EXCITATION VIA P-N HETEROJUNCTIONS OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE
    ALFEROV, ZI
    GABRUZOV, DZ
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 1919 - +
  • [3] ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE P-N JUNCTION TUNNEL DIODES
    IMENKOV, AN
    MESKIN, SS
    NASLEDOV, DN
    RAVICH, VN
    TSARENKO.BV
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 1808 - +
  • [4] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS
    GERSHENZON, M
    LOGAN, RA
    NELSON, DF
    [J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +
  • [5] ELECTRON-IRRADIATION AND SUBSEQUENT ISOCHRONEANNEALING OF PHOSPHIDE-GALLIUM P-N TRANSITIONS
    GATALSKII, GV
    KORSHUNOV, FP
    ANTOSHIN, AA
    [J]. DOKLADY AKADEMII NAUK BELARUSI, 1976, 20 (06): : 489 - 490
  • [6] RADIATION OF N-P TRANSITIONS ON CRYSTALS OF INDIUM PHOSPHIDE-GALLIUM ARSENIDE SOLID SOLUTIONS
    SIROTA, NN
    OSINSKII, VI
    [J]. DOKLADY AKADEMII NAUK SSSR, 1966, 171 (02): : 317 - &
  • [7] PROPERTIES OF ORIGINAL AND IRRADIATED PHOSPHIDE-GALLIUM LEDs
    Chumak, M. Ye.
    Lytovchenko, P. G.
    Petrenko, I., V
    Stratilat, D. P.
    Tartachnyk, V. P.
    [J]. NUCLEAR PHYSICS AND ATOMIC ENERGY, 2024, 25 (02): : 134 - 140
  • [8] ELECTRICAL PROPERTIES OF GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS
    FEDOTOV, YA
    MATSON, EA
    CHERKAS, KV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (01): : 106 - &
  • [9] EFFECT OF GROWTH CONDITIONS ON ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE EPITAXIAL P-N JUNCTIONS
    VILISOVA, MD
    LAVRENTE.LG
    CHERNIKOVA, LB
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1967, (04): : 155 - +
  • [10] LUMINESCENT P-N JUNCTIONS IN GALLIUM PHOSPHIDE
    GLASSER, W
    GRIMMEISS, HG
    SCHOLZ, H
    [J]. PHILIPS TECHNICAL REVIEW, 1964, 25 (01): : 20 - &
12345