共 50 条
- [1] INFLUENCE OF WAVEGUIDE PROPERTIES OF A P-N JUNCTION ON COHERENT EMISSION OF GALLIUM ARSENIDE LASER DIODES[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 277 - +ALLAKHVERDYAN, RGORAEVSKI.ANSUCHKOV, AF
- [2] INFLUENCE OF P-N JUNCTION STRUCTURE ON PARAMETERS OF GALLIUM ARSENIDE LASER DIODES[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1133 - +KARNAUKH.VGKRYUKOVA, IVPETROV, AI
- [3] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS[J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2813 - +ALFEROV, ZIKOROLKOV, VITRUKAN, MK
- [4] ON SECONDARY TUNNELLING PHENOMENA IN A P-N JUNCTION OF GALLIUM ARSENIDE[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (06) : 1261 - &SHIBATA, A
- [5] ELECTRICAL CHARACTERISTICS OF GALLIUM ARSENIDE P+-P-N DIODES[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1965, 10 (10): : 1636 - &KOGAN, LMMESKIN, SS
- [6] AN INVESTIGATION OF TUNNEL P-N JUNCTIONS IN POLYCRYSTALLINE GALLIUM ARSENIDE FILMS[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (04): : 710 - &LAVRENTY.LGVILISOVA, MDVYATKIN, AP
- [7] EFFECT OF GROWTH CONDITIONS ON ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE EPITAXIAL P-N JUNCTIONS[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1967, (04): : 155 - +VILISOVA, MDLAVRENTE.LGCHERNIKOVA, LB
- [8] Electrical properties of super junction p-n diodes fabricated by trench filling[J]. ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 207 - 210Yamauchi, SHattori, YYamaguchi, H
- [9] GALLIUM ARSENIDE TUNNEL DIODES[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08): : 1405 - 1409HOLONYAK, NLESK, IA
- [10] CHARACTERISTICS OF A HIGH SOLAR CONVERSION EFFICIENCY GALLIUM ARSENIDE P-N JUNCTION[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1960, 50 (10) : 983 - 985BYLANDER, EGHODGES, AJROBERTS, JA