共 50 条
- [21] EFFECT OF GROWTH CONDITIONS ON ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE EPITAXIAL P-N JUNCTIONS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1967, (04): : 155 - +
- [22] RADIATION-INDUCED CHANGES IN CURRENT-VOLTAGE CHARACTERISTICS OF HEAVILY DOPED P-N JUNCTIONS IN GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1220 - +
- [24] CAUSES OF LOWERING OF BREAKDOWN VOLTAGE OF PLANAR P-N JUNCTIONS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1013 - &
- [27] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
- [28] AVALANCHE BREAKDOWN IN P-N JUNCTIONS REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
- [29] DIRECTION OF P-N JUNCTIONS IN GALLIUM ARSENIDE BY MEANS OF MIK-1 INFRARED MICROSCOPES INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (05): : 1110 - &