共 50 条
- [1] SPONTANEOUS AND COHERENT EMISSION FROM EPITAXIAL P-N JUNCTIONS IN GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1094 - &
- [4] ELECTRIC BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS SOVIET PHYSICS-SOLID STATE, 1963, 5 (04): : 862 - 867
- [6] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1966, 14 (9-10): : 677 - &
- [7] EFFECT OF PRESSURE ON AVALANCHE BREAKDOWN VOLTAGE OF GALLIUM ANTIMONIDE, GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE p-n JUNCTIONS. Bulletin de l'Academie Polonaise des Sciences. Serie des Sciences Techniques, 1980, 28 (5-6): : 245 - 251
- [8] EFFECT OF ALLOYING TEMPERATURE ON CHARACTERISTICS OF TUNNEL P-N JUNCTIONS IN GALLIUM ARSENIDE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (10): : 1735 - &
- [10] EFFECT OF GROWTH CONDITIONS ON ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE EPITAXIAL P-N JUNCTIONS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1967, (04): : 155 - +