共 50 条
- [1] ELECTRIC BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS [J]. SOVIET PHYSICS-SOLID STATE, 1963, 5 (04): : 862 - 867
- [6] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS [J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1966, 14 (9-10): : 677 - &
- [7] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDE [J]. SOVIET PHYSICS-SOLID STATE, 1964, 6 (05): : 1146 - 1151
- [8] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDE [J]. SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (05): : 1146 - +
- [10] AN INVESTIGATION OF TUNNEL P-N JUNCTIONS IN POLYCRYSTALLINE GALLIUM ARSENIDE FILMS [J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (04): : 710 - &