DUAL ION-IMPLANTATION OF AS AND SI IN GAAS

被引：0
|
作者：
LEE, CH
CHEN, YW
LIN, MS
机构：
[1] NATL CHENG KUNG UNIV,DEPT MET & MAT SCI,TAINAN,TAIWAN
[2] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C327 / C327
页数：1
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