THERMAL-BEHAVIOR OF ALUMINUM FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS

被引：1

作者：

BANGERT, U ^{[1
]}

TANG, B ^{[1
]}

MISSOUS, M ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 154卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(95)00194-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Angstrom.

引用

页码：223 / 230

页数：8

共 50 条

[1] TRANSIENT PHOTOCONDUCTIVITY IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WERNER, A
MOUSTAKAS, TD
KUNST, M
[J]. III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 461 - 466
[2] SN-DOPED GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
FUJII, T
SUZUKI, H
HIYAMIZU, S
[J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (04): : 121 - 130
[3] ANALYSIS OF YTTERBIUM ARSENIDE FILMS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
RICHTER, HJ
SMITH, RS
HERRES, N
SEELMANNEGGEBERT, M
WENNEKERS, P
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 99 - 101
[4] A STUDY OF THE BEHAVIOR OF TIN ATOMS ON DOPING GAAS (100) FILMS GROWN BY MOLECULAR-BEAM EPITAXY
DVORYANKINA, GG
DVORYANKIN, VF
PETROV, AG
VARAKSIN, GA
[J]. INORGANIC MATERIALS, 1984, 20 (05) : 632 - 635
[5] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
CHAI, YG
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[6] ACHIEVEMENTS AND LIMITATIONS IN OPTIMIZED GAAS FILMS GROWN ON SI BY MOLECULAR-BEAM EPITAXY
GEORGAKILAS, A
PANAYOTATOS, P
STOEMENOS, J
MOURRAIN, JL
CHRISTOU, A
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) : 2679 - 2701
[7] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WOOD, CEC
JOYCE, BA
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4854 - 4861
[8] Thermal stability of CdZnO thin films grown by molecular-beam epitaxy
Li, L.
Yang, Z.
Zuo, Z.
Lim, J. H.
Liu, J. L.
[J]. APPLIED SURFACE SCIENCE, 2010, 256 (14) : 4734 - 4737
[9] DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
BLOOD, P
HARRIS, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 993 - 1007
[10] GAAS/GAALAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WEIMANN, G
SCHLAPP, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C99 - C99

← 1 2 3 4 5 →