共 50 条
- [1] THE ORIGINS AND ELIMINATION OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 854 - 857TAKAHASHI, KKAWADA, HUEDA, SFURUSE, MSHIRAYONE, S
- [2] ELIMINATION OF GALLIUM-SOURCE RELATED OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY OF GAAS[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 160 - 162CHAND, N
- [3] CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) : 104 - 112FUJIWARA, KKANAMOTO, KOHTA, YNTOKUDA, YNAKAYAMA, T
- [4] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 391 - 393WENG, SLWEBB, CCHAI, YGBANDY, SG
- [5] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122AKIMOTO, KDOHSEN, MARAI, MWATANABE, N
- [6] THERMODYNAMIC STUDY ON THE ORIGIN OF OVAL DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4260 - 4267SHINOHARA, MITO, T
- [8] EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 701 - 703FUJIWARA, KNISHIKAWA, YTOKUDA, YNAKAYAMA, T
- [9] PARTICULATES - A DIRECT ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 267 - 271WENG, SLWEBB, CCHAI, YGBANDY, SG
- [10] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 47 - 49MATTESON, SSHIH, HD