THERMAL-BEHAVIOR OF ALUMINUM FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS

被引：1
|
作者：
BANGERT, U [1 ]
TANG, B [1 ]
MISSOUS, M [1 ]
机构：
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 154卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(95)00194-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Angstrom.
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页码：223 / 230
页数：8
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