THERMAL-BEHAVIOR OF ALUMINUM FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS

被引：1

作者：

BANGERT, U ^{[1
]}

TANG, B ^{[1
]}

MISSOUS, M ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 154卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(95)00194-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Angstrom.

引用

页码：223 / 230

页数：8

共 50 条

[21] ORIGIN AND FORMATION MECHANISM OF MACROSCOPIC DEFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
DUNG, PT
LAZNICKA, M
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1986, 97 (01): : 103 - 109
[22] ANTIPHASE BOUNDARY OF GAAS FILMS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
KAWANAMI, H
HATAYAMA, A
HAYASHI, Y
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (05) : 341 - 349
[23] VERY HIGH MOBILITY HGTE FILMS GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
FELDMAN, RD
ORON, M
AUSTIN, RF
OPILA, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2872 - 2874
[24] A COMPARISON OF DEEP LEVELS IN RAPIDLY THERMAL-PROCESSED GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON SI AND GAAS SUBSTRATES
ITO, A
KITAGAWA, A
TOKUDA, Y
USAMI, A
KANO, H
NOGE, H
WADA, T
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (05) : 416 - 419
[25] CHARACTERIZATION OF GAAS FILMS GROWN ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
YODO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A): : 4631 - 4640
[26] HETEROEPITAXIAL INSB FILMS GROWN BY MOLECULAR-BEAM EPITAXY
YANO, M
TAKASE, T
KIMATA, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (02): : 707 - 713
[27] EFFECTS OF THERMAL ANNEALING ON SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SHINOZAKI, K
MANNOH, M
NOMURA, Y
MIHARA, M
ISHII, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4826 - 4827
[28] Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)
Xu, M
Liu, CX
Liu, HF
Luo, GM
Chen, XM
Yu, WX
Cui, SF
Li, JH
Chen, H
Mai, ZH
Zhou, JM
Jia, QJ
Zheng, WL
[J]. PHYSICS LETTERS A, 2002, 299 (01) : 79 - 84
[29] CRYSTALLINITY IMPROVEMENT OF HGCDTE ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SASAKI, T
TOMONO, M
ODA, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 785 - 789
[30] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
LEOPOLD, DJ
BALLINGALL, JM
WROGE, ML
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1473 - 1474

← 1 2 3 4 5 →