ORIGIN AND FORMATION MECHANISM OF MACROSCOPIC DEFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

|

作者：

DUNG, PT

LAZNICKA, M

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1986年 / 97卷 / 01期

关键词：

D O I：

10.1002/pssa.2210970107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：103 / 109

页数：7

相关论文

共 50 条

[1] ORIGIN AND FORMATION MECHANISM OF MACROSCOPIC DEFECTS IN GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.
Dung, P.Trung
Laznicka, M.
[J]. Physica Status Solidi (A) Applied Research, 1986, 97 (01): : 103 - 109
[2] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY
WENG, SL
WEBB, C
CHAI, YG
BANDY, SG
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 391 - 393
[3] RAMAN-SPECTROSCOPY OF MACROSCOPIC DEFECTS OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
JANG, HS
CHO, HY
LEE, SW
MIN, SK
YANG, IS
YANG, J
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06): : 571 - 574
[4] THERMODYNAMIC STUDY ON THE ORIGIN OF OVAL DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SHINOHARA, M
ITO, T
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4260 - 4267
[5] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
DOHSEN, M
ARAI, M
WATANABE, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122
[6] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
CHAI, YG
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[7] ORIGIN OF DEFECTS IN (111) HGTE GROWN BY MOLECULAR-BEAM EPITAXY
FELDMAN, RD
NAKAHARA, S
OPILA, RL
AUSTIN, RF
BOONE, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 98 (04) : 581 - 589
[8] TRANSIENT PHOTOCONDUCTIVITY IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WERNER, A
MOUSTAKAS, TD
KUNST, M
[J]. III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 461 - 466
[9] PARTICULATES - A DIRECT ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
WENG, SL
WEBB, C
CHAI, YG
BANDY, SG
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 267 - 271
[10] REDUCTION OF SURFACE-DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SALOKATVE, A
VARRIO, J
LAMMASNIEMI, J
ASONEN, H
PESSA, M
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1340 - 1342

← 1 2 3 4 5 →