ANTIPHASE BOUNDARY OF GAAS FILMS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：10
|
作者：
KAWANAMI, H
HATAYAMA, A
HAYASHI, Y
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 05期
关键词：
D O I：
10.1007/BF02652116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：341 / 349
页数：9
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