ANTIPHASE BOUNDARY OF GAAS FILMS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
KAWANAMI, H [1 ]
HATAYAMA, A [1 ]
HAYASHI, Y [1 ]
机构：
[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：A27 / A27
页数：1
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