Characterization of GaAs films grown on vicinal Si(110) substrates by molecular-beam epitaxy

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作者：
Yodo, Tokuo [1 ]
机构：
[1] Nippon Sheet Glass Co, Ltd, Ibaraki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 9 A期
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页码：4631 / 4640
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