TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：159

|

作者：

WOOD, CEC

JOYCE, BA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 09期

关键词：

D O I：

10.1063/1.325517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4854 / 4861

页数：8

相关论文

共 50 条

[1] A STUDY OF THE BEHAVIOR OF TIN ATOMS ON DOPING GAAS (100) FILMS GROWN BY MOLECULAR-BEAM EPITAXY
DVORYANKINA, GG
DVORYANKIN, VF
PETROV, AG
VARAKSIN, GA
[J]. INORGANIC MATERIALS, 1984, 20 (05) : 632 - 635
[2] SELENIUM DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SANO, ET
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (10): : 5636 - 5639
[3] EFFECTS OF HOT SOURCES ON RESIDUAL DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
SACKS, RN
PASTORELLO, RA
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (12) : 996 - 998
[4] ISOELECTRONIC DOPING IN GAAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
LEE, MK
CHIU, TH
DAYEM, A
AGYEKUM, E
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2653 - 2655
[5] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
ANDREWS, DA
HECKINGBOTTOM, R
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
[6] CARBON DOPING AND LATTICE CONTRACTION OF GAAS FILMS GROWN BY CONVENTIONAL MOLECULAR-BEAM EPITAXY
HOKE, WE
LEMONIAS, PJ
WEIR, DG
HENDRIKS, HT
JACKSON, GS
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 511 - 513
[7] TRANSIENT PHOTOCONDUCTIVITY IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WERNER, A
MOUSTAKAS, TD
KUNST, M
[J]. III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 461 - 466
[8] ORIENTATION DEPENDENCE OF THE SI DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
PAVESI, L
PIAZZA, F
HENINI, M
HARRISON, I
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 167 - 171
[9] STUDY OF ISOELECTRONIC IN DOPING IN MOLECULAR-BEAM EPITAXY GROWN GAAS THYRISTORS
KIM, HK
SCHLESINGER, TE
MILNES, AG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 374 - 378
[10] SN DOPING OF GAAS AND ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
ABERNATHY, CR
PEARTON, SJ
HA, NT
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 827 - 830

← 1 2 3 4 5 →