TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：159
|
作者：
WOOD, CEC
JOYCE, BA
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 09期
关键词：
D O I：
10.1063/1.325517
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4854 / 4861
页数：8
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