ULTRAHIGH DOPING LEVELS OF GAAS WITH BERYLLIUM BY MOLECULAR-BEAM EPITAXY

被引：40
|
作者：
LIEVIN, JL
ALEXANDRE, F
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 10期
关键词：
D O I：
10.1049/el:19850293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：413 / 414
页数：2
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