IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS

被引：19

作者：

MANNOH, M ^{[1
]}

NOMURA, Y ^{[1
]}

SHINOZAKI, K ^{[1
]}

MIHARA, M ^{[1
]}

ISHII, M ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.336545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1092 / 1095

页数：4

共 50 条

[1] MOLECULAR-BEAM EPITAXY WITH IONIZED BEAM DOPING
MATSUNAGA, N
NAGANUMA, M
TAKAHASHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 443 - 449
[2] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS
MATSUNAGA, N
SUZUKI, T
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713
[3] ERBIUM DOPING OF GAAS IN MOLECULAR-BEAM EPITAXY
CHARASSE, MN
GALTIER, P
LEMAIRE, F
HIRTZ, JP
HUBER, AM
GRATTEPAIN, C
LAGORSSE, O
CHAZELAS, J
VODJANI, N
WEISBUCH, C
[J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 185 - 186
[4] NITROGEN DOPING INTO GAAS1-XPX USING IONIZED BEAM IN MOLECULAR-BEAM EPITAXY
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MUKAI, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 43 (03) : 281 - 286
[5] SELENIUM DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (10): : 5636 - 5639
[6] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY
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OSTERLING, LE
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6751 - 6753
[7] ULTRAHIGH DOPING LEVELS OF GAAS WITH BERYLLIUM BY MOLECULAR-BEAM EPITAXY
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[J]. ELECTRONICS LETTERS, 1985, 21 (10) : 413 - 414
[8] ISOELECTRONIC DOPING IN GAAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2653 - 2655
[9] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
[10] MOLECULAR-BEAM EPITAXY WITH IONIZED DOPANT
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[J]. ELECTRICAL ENGINEERING IN JAPAN, 1975, 95 (06) : 28 - 32

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