IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS

被引：19
|
作者：
MANNOH, M [1 ]
NOMURA, Y [1 ]
SHINOZAKI, K [1 ]
MIHARA, M [1 ]
ISHII, M [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期
关键词：
D O I：
10.1063/1.336545
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1092 / 1095
页数：4
相关论文
共 50 条
  • [41] GAAS-MESFETS BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    DRUMMOND, TJ
    OMORI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 222 - 224
  • [42] SELECTIVE GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    SUGAYA, T
    OKADA, Y
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (6A): : L713 - L716
  • [43] SPIRAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    HSU, CC
    XU, JB
    WILSON, IH
    ANDERSSON, TG
    THORDSON, JV
    APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1552 - 1554
  • [44] GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY
    STREIT, DC
    BLOCK, TR
    HAN, AC
    WOJTOWICZ, M
    UMEMOTO, DK
    KOBAYASHI, K
    OKI, AK
    LIU, PH
    LAI, R
    NG, GI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 771 - 773
  • [45] GERMANIUM CONTACTS TO GAAS BY MOLECULAR-BEAM EPITAXY
    DEVLIN, J
    WOOD, CEC
    STALL, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : C227 - C227
  • [46] MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI
    TSAUR, BY
    METZE, GM
    APPLIED PHYSICS LETTERS, 1984, 45 (05) : 535 - 536
  • [47] CONTROL OF BE DIFFUSION IN MOLECULAR-BEAM EPITAXY GAAS
    MILLER, JN
    COLLINS, DM
    MOLL, NJ
    APPLIED PHYSICS LETTERS, 1985, 46 (10) : 960 - 962
  • [48] SILICON MOLECULAR-BEAM EPITAXY ON GAP AND GAAS
    ZALM, PC
    BULLELIEUWMA, CWT
    MAREE, PMJ
    PHILIPS TECHNICAL REVIEW, 1987, 43 (5-6): : 154 - 165
  • [49] SELECTIVE GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    HIYAMIZU, S
    FUJII, T
    NANBU, K
    SAKURAI, T
    HASHIMOTO, H
    RYUZAN, O
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C121 - C122
  • [50] EPITAXY OF FEAL FILMS ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
    KUZNIA, JN
    WOWCHAK, AM
    COHEN, PI
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (06) : 561 - 565
12345