IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS

被引：19
|
作者：
MANNOH, M [1 ]
NOMURA, Y [1 ]
SHINOZAKI, K [1 ]
MIHARA, M [1 ]
ISHII, M [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期
关键词：
D O I：
10.1063/1.336545
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1092 / 1095
页数：4
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