SILICON MOLECULAR-BEAM EPITAXY ON GAP AND GAAS

被引：0

|

作者：

ZALM, PC

BULLELIEUWMA, CWT

MAREE, PMJ

机构：

[1] Philips Research Labs, Eindhoven, Neth, Philips Research Labs, Eindhoven, Neth

来源：

PHILIPS TECHNICAL REVIEW | 1987年 / 43卷 / 5-6期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

27

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收藏

页码：154 / 165

页数：12

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