SILICON MOLECULAR-BEAM EPITAXY

被引：7
|
作者：
SHIRAKI, Y [1 ]
机构：
[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1986年 / 12卷 / 1-4期
关键词：
D O I：
10.1016/0146-3535(86)90006-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：45 / 66
页数：22
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