IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS

被引:19
|
作者
MANNOH, M [1 ]
NOMURA, Y [1 ]
SHINOZAKI, K [1 ]
MIHARA, M [1 ]
ISHII, M [1 ]
机构
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
关键词
D O I
10.1063/1.336545
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1092 / 1095
页数:4
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