共 50 条
- [32] FOCUSED ION-BEAM IMPLANTATION DOPING IN GAAS/ALGAAS MOLECULAR-BEAM EPITAXY GROWTH [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1552 - 1553
- [35] CHEMICAL DOPING OF HGCDTE BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1034 - 1038
- [36] GROWTH OF GAAS ON SIOX BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1416 - 1419
- [37] MODEL OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP): : 103 - 103
- [38] HETEROEPITAXY OF GAAS ON INP BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 354 - 357
- [39] SN INCORPORATION IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11): : L1760 - L1762
- [40] GAAS-MESFETS BY MOLECULAR-BEAM EPITAXY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 222 - 224