Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures

被引：14
|
作者：
Lavrukhin, D. V. [1 ,2 ]
Yachmenev, A. E. [1 ,2 ]
Bugaev, A. S. [1 ,2 ]
Galiev, G. B. [1 ]
Klimov, E. A. [1 ]
Khabibullin, R. A. [1 ,2 ]
Ponomarev, D. S. [1 ,2 ]
Maltsev, P. P. [1 ]
机构：
[1] Russian Acad Sci, Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia
[2] Bauman Moscow State Tech Univ, Ctr Photon & Infrared Engn, Moscow 105005, Russia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 07期
基金：
俄罗斯基础研究基金会; 俄罗斯科学基金会;
关键词：
LT-GAAS; PHOTOLUMINESCENCE; LAYERS;
D O I：
10.1134/S1063782615070179
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Molecular-beam epitaxy is used for the preparation of structures based on "low-temperature" grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28-1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580A degrees C; these features are related to the formation of point defects and their complexes. The "pump-probe" light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to T-c a parts per thousand 1.2-1.5 ps.
引用
收藏
页码：911 / 914
页数：4
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