Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures

被引：14

作者：

Lavrukhin, D. V. ^{[1
,2
]}

Yachmenev, A. E. ^{[1
,2
]}

Bugaev, A. S. ^{[1
,2
]}

Galiev, G. B. ^{[1
]}

Klimov, E. A. ^{[1
]}

Khabibullin, R. A. ^{[1
,2
]}

Ponomarev, D. S. ^{[1
,2
]}

Maltsev, P. P. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia

[2] Bauman Moscow State Tech Univ, Ctr Photon & Infrared Engn, Moscow 105005, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 07期

基金：

俄罗斯基础研究基金会; 俄罗斯科学基金会;

关键词：

LT-GAAS; PHOTOLUMINESCENCE; LAYERS;

D O I：

10.1134/S1063782615070179

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Molecular-beam epitaxy is used for the preparation of structures based on "low-temperature" grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28-1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580A degrees C; these features are related to the formation of point defects and their complexes. The "pump-probe" light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to T-c a parts per thousand 1.2-1.5 ps.

引用

页码：911 / 914

页数：4

共 50 条

[11] Hopping conduction in GaAs layers grown by molecular-beam epitaxy at low temperatures
Shimogishi, F
Mukai, K
Fukushima, S
Otsuka, N
PHYSICAL REVIEW B, 2002, 65 (16): : 1 - 5
[12] ISOELECTRONIC DOPING IN GAAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
LEE, MK
CHIU, TH
DAYEM, A
AGYEKUM, E
APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2653 - 2655
[13] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
ANDREWS, DA
HECKINGBOTTOM, R
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
[14] Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures
Burbaev, TM
Kurbatov, VA
Pogosov, AO
Rzaev, MM
Sibel'din, NN
Tsvetkov, VA
PHYSICS OF THE SOLID STATE, 2004, 46 (01) : 71 - 73
[15] Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures
T. M. Burbaev
V. A. Kurbatov
A. O. Pogosov
M. M. Rzaev
N. N. Sibel’din
V. A. Tsvetkov
Physics of the Solid State, 2004, 46 : 71 - 73
[16] COEVAPORATION PHOSPHORUS DOPING IN SI GROWN BY MOLECULAR-BEAM EPITAXY
KUBIAK, RAA
PATEL, G
LEONG, WY
HOUGHTON, R
PARKER, EHC
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03): : 233 - 235
[17] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY
BERNIER, G
BEERENS, J
DEBOECK, J
DENEFFE, K
VANHOOF, C
BORGHS, G
SOLID STATE COMMUNICATIONS, 1989, 69 (07) : 727 - 731
[18] STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
KAMINSKA, M
LILIENTALWEBER, Z
WEBER, ER
GEORGE, T
KORTRIGHT, JB
SMITH, FW
TSAUR, BY
CALAWA, AR
APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1881 - 1883
[19] ELECTRICAL AND OPTICAL-PROPERTIES OF SI DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (311) SUBSTRATES
TAKAMORI, T
FUKUNAGA, T
KOBAYASHI, J
ISHIDA, K
NAKASHIMA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07): : 1097 - 1101
[20] CORRELATION BETWEEN STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS-ON-SI GROWN BY MOLECULAR-BEAM EPITAXY
PLOOG, K
GUIMARAES, FEG
STOLZ, W
HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 51 - 59

← 1 2 3 4 5 →