COEVAPORATION PHOSPHORUS DOPING IN SI GROWN BY MOLECULAR-BEAM EPITAXY

被引：5
|
作者：
KUBIAK, RAA [1 ]
PATEL, G [1 ]
LEONG, WY [1 ]
HOUGHTON, R [1 ]
PARKER, EHC [1 ]
机构：
[1] CITY LONDON POLYTECH,SIR JOHN CASS FAC PHYS SCI & TECHNOL,SOLID STATE MBE RES GRP,LONDON EC3N 2EY,ENGLAND
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 41卷 / 03期
关键词：
D O I：
10.1007/BF00616844
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：233 / 235
页数：3
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