PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

BERNIER, G

BEERENS, J

DEBOECK, J

DENEFFE, K

VANHOOF, C

BORGHS, G

机构：

[1] UNIV SHERBROOKE, CTR RECH PHYS SOLIDE, SHERBROOKE J1K 2R1, QUEBEC, CANADA

[2] INTERUNIV MICROELECTR CTR, B-3030 LEUVEN, BELGIUM

来源：

SOLID STATE COMMUNICATIONS | 1989年 / 69卷 / 07期

关键词：

D O I：

10.1016/0038-1098(89)90819-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：727 / 731

页数：5

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