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PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY

被引：8
|
作者：
BERNIER, G
BEERENS, J
DEBOECK, J
DENEFFE, K
VANHOOF, C
BORGHS, G
机构：
[1] UNIV SHERBROOKE, CTR RECH PHYS SOLIDE, SHERBROOKE J1K 2R1, QUEBEC, CANADA
[2] INTERUNIV MICROELECTR CTR, B-3030 LEUVEN, BELGIUM
来源：
SOLID STATE COMMUNICATIONS | 1989年 / 69卷 / 07期
关键词：
D O I：
10.1016/0038-1098(89)90819-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：727 / 731
页数：5
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