首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
SHALLOW PROTON STRIPED GAALAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
被引:0
|
作者
:
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
SCIFRES, DR
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
机构
:
来源
:
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
|
1982年
/ 323卷
关键词
:
D O I
:
暂无
中图分类号
:
O43 [光学];
学科分类号
:
070207 ;
0803 ;
摘要
:
引用
收藏
页码:100 / 103
页数:4
相关论文
共 50 条
[41]
PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KAWAI, H
论文数:
0
引用数:
0
h-index:
0
KAWAI, H
KANEKO, K
论文数:
0
引用数:
0
h-index:
0
KANEKO, K
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
56
(02)
: 463
-
467
[42]
HEAVILY SI-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FURUHATA, N
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
FURUHATA, N
KAKIMOTO, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
KAKIMOTO, K
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
YOSHIDA, M
KAMEJIMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
KAMEJIMA, T
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(09)
: 4692
-
4695
[43]
MAGNETOPHOTOLUMINESCENCE CHARACTERIZATION OF RESIDUAL DONORS IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
WATKINS, SP
论文数:
0
引用数:
0
h-index:
0
机构:
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
WATKINS, SP
HAACKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
HAACKE, G
BURKHARD, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
BURKHARD, H
THEWALT, MLW
论文数:
0
引用数:
0
h-index:
0
机构:
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
THEWALT, MLW
CHARBONNEAU, S
论文数:
0
引用数:
0
h-index:
0
机构:
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
CHARBONNEAU, S
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(06)
: 3205
-
3209
[44]
INTERFACE CHARACTERIZATION OF (IN,GA)AS/ALGAAS LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KIM, J
论文数:
0
引用数:
0
h-index:
0
机构:
Material Research Laboratory, University of Illinois, Urbana, IL 61801
KIM, J
ALWAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Material Research Laboratory, University of Illinois, Urbana, IL 61801
ALWAN, JJ
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Material Research Laboratory, University of Illinois, Urbana, IL 61801
COLEMAN, JJ
WAYMAN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
Material Research Laboratory, University of Illinois, Urbana, IL 61801
WAYMAN, CM
[J].
MATERIALS LETTERS,
1991,
11
(5-7)
: 151
-
154
[45]
THE M-CENTER IN ZINC SELENIDE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ZHENG, JZ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
ZHENG, JZ
ALLEN, JW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
ALLEN, JW
YATES, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
YATES, HM
WILLIAMS, JO
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND
WILLIAMS, JO
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
117
(1-4)
: 358
-
361
[46]
ANOMALOUS MG INCORPORATION BEHAVIOR IN INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
NISHIKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, 1, Komukai Toshiba-cho
NISHIKAWA, Y
SUGAWARA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, 1, Komukai Toshiba-cho
SUGAWARA, H
KOKUBUN, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, 1, Komukai Toshiba-cho
KOKUBUN, Y
[J].
JOURNAL OF CRYSTAL GROWTH,
1992,
119
(3-4)
: 292
-
296
[47]
ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
UWAI, K
论文数:
0
引用数:
0
h-index:
0
UWAI, K
NAKAGOME, H
论文数:
0
引用数:
0
h-index:
0
NAKAGOME, H
TAKAHEI, K
论文数:
0
引用数:
0
h-index:
0
TAKAHEI, K
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(13)
: 1010
-
1012
[48]
HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
PEARTON, SJ
MALM, DL
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
MALM, DL
HEIMBROOK, LA
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
HEIMBROOK, LA
KOVALCHICK, J
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
KOVALCHICK, J
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
ABERNATHY, CR
CARUSO, R
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
CARUSO, R
VERNON, SM
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
VERNON, SM
HAVEN, VE
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
HAVEN, VE
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(09)
: 682
-
684
[49]
CHARACTERIZATION OF GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI-ON-INSULATOR
PEARTON, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
PEARTON, SJ
VERNON, SM
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
VERNON, SM
SHORT, KT
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
SHORT, KT
BROWN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
BROWN, JM
ABERNATHY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
ABERNATHY, CR
CARUSO, R
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
CARUSO, R
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
CHU, SNG
HAVEN, VE
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
HAVEN, VE
BUNKER, SN
论文数:
0
引用数:
0
h-index:
0
机构:
SPIRE CORP,BEDFORD,MA 01730
SPIRE CORP,BEDFORD,MA 01730
BUNKER, SN
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(15)
: 1188
-
1190
[50]
TILT DEFORMATION OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAP ON SI SUBSTRATE
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku Nagoya, 466, Gokiso-cho
SUZUKI, T
MORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku Nagoya, 466, Gokiso-cho
MORI, M
JIANG, ZK
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku Nagoya, 466, Gokiso-cho
JIANG, ZK
SOGA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku Nagoya, 466, Gokiso-cho
SOGA, T
JIMBO, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku Nagoya, 466, Gokiso-cho
JIMBO, T
UMENO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku Nagoya, 466, Gokiso-cho
UMENO, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1992,
31
(07):
: 2079
-
2084
←
1
2
3
4
5
→