INTERFACE CHARACTERIZATION OF (IN,GA)AS/ALGAAS LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

The structures and interface qualities of (In0.1Ga0.9)As/(Al0.2Ga0.8)As and (In0.2Ga0.8)As/(Al0.2Ga0.8)As semiconductor superlattices grown by the MOCVD technique have been examined by the high-resolution transmission electron microscopy image technique. Interface quality can be distinguished using a (100) zone axis with proper specimen thickness range and an appropriate objective aperture. The interface is found to be smooth and the interdiffusion of elements is restricted to a monolayer scale on both sides of the single quantum well structures.