SI-DOPED GAAS EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：17
|
作者：
OKAMOTO, K
ONOZAWA, S
IMAI, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期
关键词：
D O I：
10.1063/1.333772
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2993 / 2995
页数：3
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