HEAVILY SI-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：23
|
作者：
FURUHATA, N
KAKIMOTO, K
YOSHIDA, M
KAMEJIMA, T
机构：
[1] NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
[2] NEC CORP, RESOURCE & ENVIRONM PROTECT RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期
关键词：
D O I：
10.1063/1.341253
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4692 / 4695
页数：4
相关论文
共 50 条
  • [1] SI-DOPED GAAS EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    ONOZAWA, S
    IMAI, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2993 - 2995
  • [2] HEAVILY SI-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND SILANE
    CHICHIBU, S
    IWAI, A
    MATSUMOTO, S
    HIGUCHI, H
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (04) : 489 - 491
  • [3] CHARACTERISTICS OF SI-DOPED GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING A SILANE SOURCE
    LIU, CW
    CHEN, SL
    LAY, JP
    LEE, SC
    LIN, HH
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1634 - 1636
  • [4] ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, TW
    KIM, Y
    KIM, MS
    KIM, EK
    MIN, SK
    [J]. SOLID STATE COMMUNICATIONS, 1992, 84 (12) : 1133 - 1136
  • [5] DX CENTERS IN SI-DOPED ALXGA1-XAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    KOIZUMI, H
    YAMAGUCHI, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1669 - 1673
  • [6] DONOR-CATION VACANCY COMPLEX IN SI-DOPED ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    TATSUYA, O
    ITOH, H
    TANAKA, H
    KASAI, K
    TAKIKAWA, M
    KOMENO, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4603 - 4605
  • [7] CHARACTERIZATION OF HEAVILY CARBON-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND METALORGANIC MOLECULAR-BEAM EPITAXY
    STOCKMAN, SA
    HOFLER, GE
    BAILLARGEON, JN
    HSIEH, KC
    CHENG, KY
    STILLMAN, GE
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 981 - 987
  • [8] HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    PEARTON, SJ
    MALM, DL
    HEIMBROOK, LA
    KOVALCHICK, J
    ABERNATHY, CR
    CARUSO, R
    VERNON, SM
    HAVEN, VE
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 682 - 684
  • [9] ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    UWAI, K
    NAKAGOME, H
    TAKAHEI, K
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1010 - 1012
  • [10] CHARACTERIZATION OF GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI-ON-INSULATOR
    PEARTON, SJ
    VERNON, SM
    SHORT, KT
    BROWN, JM
    ABERNATHY, CR
    CARUSO, R
    CHU, SNG
    HAVEN, VE
    BUNKER, SN
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1188 - 1190
12345